Reliability study on positive bias temperature instability...

Japanese Journal of Applied Physics 2017 / 04 Vol. 56; Iss. 4S

Reliability study on positive bias temperature instability in SiC MOSFETs by fast drain current measurement

Okunishi, Takuma, Hisada, Kenichi, Toyoda, Hisashi, Yamamoto, Yoichi, Arai, Koichi, Yamashita, Yasunori, Yamazaki, Koichi, Nara, Shunji
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.04CR01
Date:
April, 2017
File:
PDF, 1.07 MB
english, 2017
Conversion to is in progress
Conversion to is failed