Formation of GaN quantum dots by molecular beam epitaxy using NH 3 as nitrogen source
Damilano, B., Brault, J., Massies, J.Volume:
118
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4923425
Date:
July, 2015
File:
PDF, 4.79 MB
english, 2015