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Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Impact of excess In-atoms at high growth temperature
Yoshikawa, Akihiko, Kusakabe, Kazuhide, Hashimoto, Naoki, Imai, Daichi, Hwang, Eun-SookVolume:
120
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4972027
Date:
December, 2016
File:
PDF, 5.04 MB
english, 2016