Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2017 / 01 Vol. 35; Iss. 1
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Impact of temperature on conduction mechanisms and switching parameters in HfO 2 -based 1T-1R resistive random access memories devices
Pérez, Eduardo, Wenger, Christian, Grossi, Alessandro, Zambelli, Cristian, Olivo, Piero, Roelofs, RobinVolume:
35
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4967308
Date:
January, 2017
File:
PDF, 1.41 MB
english, 2017