![](/img/cover-not-exists.png)
[IEEE 2016 IEEE Annual India Conference (INDICON) - Bangalore, India (2016.12.16-2016.12.18)] 2016 IEEE Annual India Conference (INDICON) - Electron mobility modeling in strained-Si n-MOSFETs using TCAD
Dash, Tara Prasanna, Pradhan, Diana, Das, Sanghamitra, Nanda, Rajib K.Year:
2016
Language:
english
DOI:
10.1109/INDICON.2016.7839160
File:
PDF, 289 KB
english, 2016