Pt–Ti–O gate silicon–metal–insulator–semiconductor field-effect transistor hydrogen gas sensors in harsh environments
Usagawa, Toshiyuki, Ueda, Kazuhiro, Nambu, Akira, Yoneyama, Akio, Kikuchi, Yota, Watanabe, AtsushiVolume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.067102
Date:
June, 2016
File:
PDF, 2.11 MB
english, 2016