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The temperature dependence of the resistivity of ohmic contacts based on gallium arsenide and indium phosphide in the 4.2–300 K range
Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Konakova, R. V., Vitusevich, S. A., Novitskii, S. V., Sheremet, V. N., Pilipchuk, A. S.Volume:
42
Language:
english
Journal:
Technical Physics Letters
DOI:
10.1134/S1063785016060286
Date:
June, 2016
File:
PDF, 218 KB
english, 2016