A comparative TCAD simulations of a P-and N-type organic...

Journal of Materials Science: Materials in Electronics 2017 / 6 Vol. 28; Iss. 11

A comparative TCAD simulations of a P-and N-type organic field effect transistors: field-dependent mobility, bulk and interface traps models

Boubaker, A., Hafsi, B., Lmimouni, K., Kalboussi, A.
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Volume:
28
Language:
english
Journal:
Journal of Materials Science: Materials in Electronics
DOI:
10.1007/s10854-017-6480-y
Date:
June, 2017
File:
PDF, 1.50 MB
english, 2017
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