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Influence of Ammonia on Amorphous Carbon Resistive Random Access Memory
Chen, Wen-Chung, Tsai, Tsung-Ming, Chang, Kuan-Chang, Chen, Hsin-Lu, Shih, Chih-Cheng, Yang, Chih-Cheng, Lin, Jiun-Chiu, Lin, Yu-Shuo, Su, Yu-Ting, Chen, Po-HsunVolume:
38
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2017.2668463
Date:
April, 2017
File:
PDF, 804 KB
english, 2017