A Quasi-3-D Scaling Length Model for Trapezoidal FinFET and...

IEEE Transactions on Nanotechnology 2017 / 3 Vol. 16; Iss. 2

A Quasi-3-D Scaling Length Model for Trapezoidal FinFET and Its Application to Subthreshold Behavior Analysis

Gao, Hong-Wun, Wang, Yeong-Her, Chiang, Te-Kuang
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Volume:
16
Language:
english
Journal:
IEEE Transactions on Nanotechnology
DOI:
10.1109/TNANO.2017.2662018
Date:
March, 2017
File:
PDF, 609 KB
english, 2017
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