Selective etching of GaAs grown over AlAs etch-stop layer...

Materials Science in Semiconductor Processing 2017 / 06 Vol. 63

Selective etching of GaAs grown over AlAs etch-stop layer in buffered citric acid/H 2 O 2 solution

Kuźmicz, A., Chmielewski, K., Serebrennikova, O., Muszalski, J.
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Volume:
63
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2017.01.020
Date:
June, 2017
File:
PDF, 696 KB
english, 2017
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