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Drain Current Model for Double Gate (DG) p-n-i-n TFET: Accumulation to Inversion Region of Operation
Upasana,, Narang, Rakhi, Saxena, Manoj, Gupta, MridulaVolume:
104
Language:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2017.02.008
Date:
April, 2017
File:
PDF, 1.41 MB
english, 2017