Polymer ferroelectric field-effect memory device with SnO...

Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

Caraveo-Frescas, J. A., Khan, M. A., Alshareef, H. N.
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Volume:
4
Language:
english
Journal:
Scientific Reports
DOI:
10.1038/srep05243
Date:
June, 2014
File:
PDF, 1.43 MB
english, 2014
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