An Accurate Analytical Current Model of Double-gate...

IEEE Transactions on Electron Devices 2017 / 3 Vol. 64; Iss. 3

An Accurate Analytical Current Model of Double-gate Heterojunction Tunneling FET

Guan, Yunhe, Li, Zunchao, Zhang, Wenhao, Zhang, Yefei
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Volume:
64
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2017.2654248
Date:
March, 2017
File:
PDF, 1.17 MB
english, 2017
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