Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2017 / 01 Vol. 35; Iss. 1
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Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
Krylov, Igor, Pokroy, Boaz, Ritter, Dan, Eizenberg, MosheVolume:
35
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4973300
Date:
January, 2017
File:
PDF, 2.48 MB
english, 2017