Simulation of carbon nanotube field effect transistors...

IOP Conference Series Materials Science and Engineering 2016 / 09 Vol. 149

Simulation of carbon nanotube field effect transistors using NEGF

Aravind, S, Shravan, S, Shrijan, S, Sanjeev, R Venkat, Sundari, B Bala Tripura
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Volume:
149
Language:
english
Journal:
IOP Conference Series: Materials Science and Engineering
DOI:
10.1088/1757-899X/149/1/012183
Date:
September, 2016
File:
PDF, 843 KB
english, 2016
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