Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2015 / 11 Vol. 33; Iss. 6
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Effect of GaN surface treatment on Al 2 O 3 / n -GaN MOS capacitors
Hossain, Tashfin, Wei, Daming, Edgar, James H., Garces, Nelson Y., Nepal, Neeraj, Hite, Jennifer K., Mastro, Michael A., Eddy, Charles R., Meyer, Harry M.Volume:
33
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4931793
Date:
November, 2015
File:
PDF, 1.35 MB
english, 2015