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Incorporation of black phosphorus into P3HT:PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances
Lin, Yow-Jon, Lin, Hong-Zhi, Yan, Nian-Hao, Tang, Zhi-Hui, Chang, Hsing-ChengVolume:
122
Language:
english
Journal:
Applied Physics A
DOI:
10.1007/s00339-016-0490-0
Date:
November, 2016
File:
PDF, 1008 KB
english, 2016