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Cu-Si nanoobjects prepared by CVD on Cu/Cu 5 Si-substrates using various precursors (SiH 4 , EtSiH 3 , BuSiH 3 ) with added H 2 or air
Klementová, Mariana, Krabáč, Lubomír, Brázda, Petr, Palatinus, Lukáš, Dřínek, VladislavVolume:
465
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2017.02.019
Date:
May, 2017
File:
PDF, 1.26 MB
english, 2017