SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 28 January 2017)] Gallium Nitride Materials and Devices XII - Dominant transverse-electric polarized emission from 298 nm MBE-grown AlN-delta-GaN quantum well ultraviolet light-emitting diodes
Chyi, Jen-Inn, Fujioka, Hiroshi, Morkoç, Hadis, Nanishi, Yasushi, Schwarz, Ulrich T., Shim, Jong-In, Liu, Cheng, Ooi, Yu Kee, Islam, S. M., Xing, Huili Grace, Jena, Debdeep, Zhang, JingVolume:
10104
Year:
2017
Language:
english
DOI:
10.1117/12.2252487
File:
PDF, 588 KB
english, 2017