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High-efficiency impurity activation by precise control of cooling rate during atmospheric pressure thermal plasma jet annealing of 4H-SiC wafer
Maruyama, Keisuke, Hanafusa, Hiroaki, Ashihara, Ryuhei, Hayashi, Shohei, Murakami, Hideki, Higashi, SeiichiroVolume:
54
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.54.06GC01
Date:
June, 2015
File:
PDF, 1.99 MB
english, 2015