Microstructure-dependent DC set switching behaviors of...

NPG Asia Materials 2015 / 6 Vol. 7; Iss. 6

Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM

Baek, Kyungjoon, Song, Kyung, Son, Sung Kyu, Oh, Jang Won, Jeon, Seung-Joon, Kim, Won, Kim, Ho Joung, Oh, Sang Ho
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Volume:
7
Language:
english
Journal:
NPG Asia Materials
DOI:
10.1038/am.2015.49
Date:
June, 2015
File:
PDF, 4.77 MB
english, 2015
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