GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD
Hospodková, Alice, Vyskočil, Jan, Zíková, Markéta, Oswald, Jiří, Pangrác, Jiří, Petříček, OttoVolume:
4
Language:
english
Journal:
Materials Research Express
DOI:
10.1088/2053-1591/aa598e
Date:
February, 2017
File:
PDF, 2.80 MB
english, 2017