Influence of the doping type and level on the morphology of...

Semiconductors 2017 / 2 Vol. 51; Iss. 2

Influence of the doping type and level on the morphology of porous Si formed by galvanic etching

Pyatilova, O. V., Gavrilov, S. A., Shilyaeva, Yu. I., Pavlov, A. A., Shaman, Yu. P., Dudin, A. A.
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Volume:
51
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782617020178
Date:
February, 2017
File:
PDF, 750 KB
english, 2017
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