Atomistic mechanisms of Si chemical mechanical polishing in...

Computational Materials Science 2017 / 04 Vol. 131

Atomistic mechanisms of Si chemical mechanical polishing in aqueous H 2 O 2 : ReaxFF reactive molecular dynamics simulations

Wen, Jialin, Ma, Tianbao, Zhang, Weiwei, van Duin, Adri C.T., Lu, Xinchun
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Volume:
131
Language:
english
Journal:
Computational Materials Science
DOI:
10.1016/j.commatsci.2017.02.005
Date:
April, 2017
File:
PDF, 5.41 MB
english, 2017
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