Compositionally graded InGaN layers grown on vicinal N-face...

Journal of Crystal Growth 2017 / 05 Vol. 465

Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy

Hestroffer, Karine, Lund, Cory, Koksaldi, Onur, Li, Haoran, Schmidt, Gordon, Trippel, Max, Veit, Peter, Bertram, Frank, Lu, Ning, Wang, Qingxiao, Christen, Jürgen, Kim, Moon J., Mishra, Umesh K., Kell
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Volume:
465
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2017.02.037
Date:
May, 2017
File:
PDF, 2.89 MB
english, 2017
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