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AIP Conference Proceedings [AIP PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors - Seoul, (Korea) (25–30 July 2010)] - Electrical Properties Of InN Layers Obtained Via Nitridation Of InAs Substrates Using Metal Organic Vapor Phase Epitaxy (MOVPE)
Rangel-Kuoppa, Victor-Tapio, Sánchez-Reséndiz, Victor, Ihm, Jisoon, Cheong, HyeonsikYear:
2011
Language:
english
DOI:
10.1063/1.3666293
File:
PDF, 152 KB
english, 2011