Low leakage ZrO 2 based...

Journal of Applied Physics 2016 / 02 Vol. 119; Iss. 6

Low leakage ZrO 2 based capacitors for sub 20 nm dynamic random access memory technology nodes

Pešić, Milan, Knebel, Steve, Geyer, Maximilian, Schmelzer, Sebastian, Böttger, Ulrich, Kolomiiets, Nadiia, Afanas'ev, Valeri V., Cho, Kyuho, Jung, Changhwa, Chang, Jaewan, Lim, Hanjin, Mikolajick, Tho
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Volume:
119
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4941537
Date:
February, 2016
File:
PDF, 875 KB
english, 2016
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