A Novel Localized-Trapped-Charge-Induced Threshold Voltage...

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IEEE Transactions on Device and Materials Reliability 2017

A Novel Localized-Trapped-Charge-Induced Threshold Voltage Model for Double-Fin Multi-Channel FETs (DFMcFETs)

Gao, Hong-Wun, Wang, Yeong-Her, Chiang, Te-Kuang
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Year:
2017
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/TDMR.2017.2669094
File:
PDF, 574 KB
english, 2017
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