Further optimization of VLS localized epitaxy for deeper...

physica status solidi (a) 2017 / 04 Vol. 214; Iss. 4

Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions

Sejil, S., Lazar, M., Carole, D., Brylinski, C., Planson, D., Ferro, G., Raynaud, C.
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Volume:
214
Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201600454
Date:
April, 2017
File:
PDF, 1.94 MB
english, 2017
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