Change of scattering mechanism and annealing out of defects...

Change of scattering mechanism and annealing out of defects on Ga-doped ZnO films deposited by radio-frequency magnetron sputtering

Nulhakim, Lukman, Makino, Hisao
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Volume:
119
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4954001
Date:
June, 2016
File:
PDF, 1.49 MB
english, 2016
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