[IEEE 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2016.8.3-2016.8.5)] 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Enhancement-mode AlGaN/GaN MOS-HEMT on silicon with ultrathin barrier and diluted KOH passivation

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