Abnormal Dual Channel Formation Induced by Hydrogen...

IEEE Electron Device Letters 2017 / 3 Vol. 38; Iss. 3

Abnormal Dual Channel Formation Induced by Hydrogen Diffusion From SiN x Interlayer Dielectric in Top Gate a-InGaZnO Transistors

Chen, Guan-Fu, Chang, Ting-Chang, Chen, Hua-Mao, Chen, Bo-Wei, Chen, Hong-Chih, Li, Cheng-Ya, Tai, Ya-Hsiang, Hung, Yu-Ju, Chang, Kuo-Jui, Cheng, Kai-Chung, Huang, Chen-Shuo, Chen, Kuo-Kuang, Lu, Hsue
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Volume:
38
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2017.2657546
Date:
March, 2017
File:
PDF, 546 KB
english, 2017
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