Improved performance of InGaN/GaN flip-chip light-emitting...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2016 / 01 Vol. 34; Iss. 1

Improved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contacts

Hasanov, Namig, Zhu, Binbin, Sharma, Vijay Kumar, Lu, Shunpeng, Zhang, Yiping, Liu, Wei, Tan, Swee Tiam, Sun, Xiao Wei, Demir, Hilmi Volkan
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Volume:
34
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4939186
Date:
January, 2016
File:
PDF, 1.71 MB
english, 2016
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