Alleviation of parasitic reactions for III-nitride epitaxy...

Journal of Crystal Growth 2017 / 05 Vol. 465

Alleviation of parasitic reactions for III-nitride epitaxy in MOCVD with a spatial separated source delivery method by controlling the main reaction type

Yang, Haojun, Wu, Haiyan, Hu, Wei, Ma, Ziguang, Jiang, Yang, Wang, Wenxin, Jia, Haiqiang, Zhou, Junming, Chen, Hong
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
465
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2017.02.033
Date:
May, 2017
File:
PDF, 1.56 MB
english, 2017
Conversion to is in progress
Conversion to is failed