Memory Devices: Direct Observations of Nanofilament...

Advanced Materials 2017 / 03 Vol. 29; Iss. 10

Memory Devices: Direct Observations of Nanofilament Evolution in Switching Processes in HfO 2 -Based Resistive Random Access Memory by In Situ TEM Studies (Adv. Mater. 10/2017)

Li, Chao, Gao, Bin, Yao, Yuan, Guan, Xiangxiang, Shen, Xi, Wang, Yanguo, Huang, Peng, Liu, Lifeng, Liu, Xiaoyan, Li, Junjie, Gu, Changzhi, Kang, Jinfeng, Yu, Richeng
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Volume:
29
Journal:
Advanced Materials
DOI:
10.1002/adma.201770065
Date:
March, 2017
File:
PDF, 2.39 MB
2017
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