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Thermal Atomic Layer Etching of SiO 2 by a “Conversion-Etch” Mechanism Using Sequential Reactions of Trimethylaluminum and Hydrogen Fluoride
DuMont, Jaime W., Marquardt, Amy E., Cano, Austin M., George, Steven M.Volume:
9
Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/acsami.7b01259
Date:
March, 2017
File:
PDF, 1.27 MB
english, 2017