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Transfer free graphene growth on SiO2 substrate at 250 °C
Vishwakarma, Riteshkumar, Rosmi, Mohamad Saufi, Takahashi, Kazunari, Wakamatsu, Yuji, Yaakob, Yazid, Araby, Mona Ibrahim, Kalita, Golap, Kitazawa, Masashi, Tanemura, MasakiVolume:
7
Language:
english
Journal:
Scientific Reports
DOI:
10.1038/srep43756
Date:
March, 2017
File:
PDF, 1.45 MB
english, 2017