InAlN/AlN/GaN heterostructures for high electron mobility...

Journal of Physics Conference Series 2016 / 08 Vol. 741

InAlN/AlN/GaN heterostructures for high electron mobility transistors

Usov, S O, Sakharov, A V, Tsatsulnikov, A F, Lundin, V W, Zavarin, E E, Nikolaev, A E, Yagovkina, M A, Zemlyakov, V E, Egorkin, V I, Ustinov, V M
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Volume:
741
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/741/1/012164
Date:
August, 2016
File:
PDF, 3.99 MB
english, 2016
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