Charge control in N-polar InAlN high-electron-mobility...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2015 / 11 Vol. 33; Iss. 6

Charge control in N-polar InAlN high-electron-mobility transistors grown by plasma-assisted molecular beam epitaxy

Hardy, Matthew T., Storm, David F., Downey, Brian P., Katzer, D. Scott, Meyer, David J., McConkie, Thomas O., Smith, David J.
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Volume:
33
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4935130
Date:
November, 2015
File:
PDF, 2.18 MB
english, 2015
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