Study of phosphorus doped Si:C films formed by...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2017 / 03 Vol. 35; Iss. 2

Study of phosphorus doped Si:C films formed by in situ doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devices

Mochizuki, Shogo, Loesing, Rainer, Wang, Yun-Yu, Jagannathan, Hemanth
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Volume:
35
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4975923
Date:
March, 2017
File:
PDF, 4.60 MB
english, 2017
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