Study of Ehrlich-Schwoebel Barrier in 4H-SiC Epitaxial...

Materials Science Forum 2016 / 5 Vol. 858

Study of Ehrlich-Schwoebel Barrier in 4H-SiC Epitaxial Growths by Molecular Statics Method

Guo, Hui Jun, Huang, Wei, Peng, Jun, Zhou, Ren Wei, Liu, Xue Chao, Zheng, Yan Qing, Shi, Er Wei
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Volume:
858
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.858.217
Date:
May, 2016
File:
PDF, 404 KB
english, 2016
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