Development of n-type Te-doped GaSb substrates with low...

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Infrared Physics & Technology 2017 / 3

Development of n-type Te-doped GaSb substrates with low carrier concentration for FPA applications

Roodenko, K., Liao, P.-K., Lan, D., Clark, K.P., Fraser, E.D., Frensley, P.W., Vargason, K.W., Kuo, J.-M., Kao, Y.-C., Pinsukanjana, P.R.
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Language:
english
Journal:
Infrared Physics & Technology
DOI:
10.1016/j.infrared.2017.02.017
Date:
March, 2017
File:
PDF, 1.02 MB
english, 2017
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