Effects of Localized Body Doping on Switching...

IEEE Transactions on Electron Devices 2017 / 4 Vol. 64; Iss. 4

Effects of Localized Body Doping on Switching Characteristics of Tunnel FET Inverters With Vertical Structures

Kwon, Dae Woong, Kim, Hyun Woo, Kim, Jang Hyun, Park, Euyhwan, Lee, Junil, Kim, Wandong, Kim, Sangwan, Lee, Jong-Ho, Park, Byung-Gook
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Volume:
64
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2017.2669365
Date:
April, 2017
File:
PDF, 2.56 MB
english, 2017
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