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[IEEE 2016 IEEE Students’ Technology Symposium (TechSym) - Kharagpur, West Bengal, India (2016.9.30-2016.10.2)] 2016 IEEE Students’ Technology Symposium (TechSym) - Performance analysis of a novel hetero-junction tunnel FET based SRAM at 0.3V supply voltage
Ansari, Mohd Kashif Zia, Ahish, S., Sharma, Dheeraj, Vasantha, M. H., Kumar, Y. B. NithinYear:
2016
Language:
english
DOI:
10.1109/techsym.2016.7872686
File:
PDF, 1016 KB
english, 2016