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[IEEE 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - Phoenix, AZ, USA (2017.1.15-2017.1.18)] 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - A G band +2 dBm balanced frequency doubler in 55 nm SiGe BiCMOS
Aouimeur, W., Moron-Guerra, J., Serhan, A., Lepilliet, S., Quemerais, T., Gloria, D., Lauga-Larroze, E., Arnould, J.-D., Gaquiere, C.Year:
2017
Language:
english
DOI:
10.1109/SIRF.2017.7874371
File:
PDF, 413 KB
english, 2017