Direct observation of trapped charges under field-plate in p-GaN gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation
Katsuno, Takashi, Manaka, Takaaki, Soejima, Narumasa, Iwamoto, MitsumasaVolume:
110
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4977084
Date:
February, 2017
File:
PDF, 1.65 MB
english, 2017