Temperature- and voltage-dependent trap generation model in...

Chinese Physics B 2016 / 08 Vol. 25; Iss. 8

Temperature- and voltage-dependent trap generation model in high- k metal gate MOS device with percolation simulation

Xu, Hao, Yang, Hong, Wang, Yan-Rong, Wang, Wen-Wu, Luo, Wei-Chun, Qi, Lu-Wei, Li, Jun-Feng, Zhao, Chao, Chen, Da-Peng, Ye, Tian-Chun
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Volume:
25
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/25/8/087306
Date:
August, 2016
File:
PDF, 353 KB
english, 2016
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