An Energy-Efficient Tensile-Strained Ge/InGaAs TFET 7T SRAM...

IEEE Transactions on Electron Devices 2017 / 5 Vol. 64; Iss. 5

An Energy-Efficient Tensile-Strained Ge/InGaAs TFET 7T SRAM Cell Architecture for Ultralow-Voltage Applications

Liu, Jheng-Sin, Clavel, Michael B., Hudait, Mantu K.
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Volume:
64
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2017.2675364
Date:
May, 2017
File:
PDF, 1.88 MB
english, 2017
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