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Molecular epitaxy and the electronic properties of Ge/Si...

Low Temperature Physics 2004 / 11 Vol. 30; Iss. 11

Molecular epitaxy and the electronic properties of Ge/Si heterosystems with quantum dots

Dvurechensky, A. V., Nikiforov, A. I., Pchelyakov, O. P., Teys, S. A., Yakimov, A. I.
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Volume:
30
Language:
english
Journal:
Low Temperature Physics
DOI:
10.1063/1.1820017
Date:
November, 2004
File:
PDF, 462 KB
english, 2004
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